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专利名称：Method and apparatus for plating, and
plating structure
发明人：Akira Yoshio,Yuji Segawa申请号：US09487828申请日：20000120公开号：US06555158B1公开日：20030429
专利附图：
摘要：There is a method and apparatus for plating in which electroless copper platingis performed in a contact hole and an interconnect trench on a minute scale of asemiconductor integrated circuit device, and a plating structure. Organic material
originated from an organic gas carried over from the preceding step is removed from theinner surface of a blind hole, thereafter the surface of the barrier layer is subjected topredetermined pretreatments comprising a hydroxylation treatment, a couplingtreatment, a Pd colloidal solution treatment and the like, and following the
pretreatments, electroless plating with copper is effected desirably under influence ofultrasonic waves. Hence, a uniform, good quality plating layer is formed inside andoutside the hole and a CMP processing following the plating is performed with ease.
申请人：SONY CORPORATION
代理机构：Rader, Fishman & Grauer PLLC
代理人：Ronald P. Kananen, Esq.
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