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专利名称：High performance switch for switched
inductor tuned RF circuit
发明人：Arya Reza Behzad申请号：US10842824申请日：20040511公开号：US07071799B2公开日：20060704
专利附图：
摘要：A Radio Frequency (RF) circuit includes an active portion and a tuned portion.The active portion receives an RF signal and that operates upon the RF signal. The tunedportion couples to the active portion and includes a first inductor, a second inductor, and
an NMOS transistor. The NMOS transistor has a gate, a drain, a source, and a body. Thedrain and source operably couple/decouple the second inductor to/from the firstinductor. The drain and source are biased at respective operating voltages (greater thanground and less than a first voltage supply) by the active portion and the tuning portion.The body couples to a first voltage supply, via a control circuit or switch in some cases.Applying a second voltage supply (that is greater than the first voltage supply) to thegate turns ON the NMOS transistor.
申请人：Arya Reza Behzad
地址：Poway CA US
国籍：US
代理机构：Garlick Harrison & Markison LLP
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