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专利名称：EPITAXIAL STRUCTURE发明人：YANG WEI,SHOU-SHAN FAN申请号：US13276302申请日：20111018
公开号：US20120175743A1公开日：20120712
专利附图：
摘要：An epitaxial structure is provided. The epitaxial structure includes a substrate,an first epitaxial layer, a second epitaxial layer, a first carbon nanotube layer and a secondcarbon nanotube layer. The first epitaxial layer is located on the substrate. The firstcarbon nanotube layer is located between the substrate and the first epitaxial layer. The
second epitaxial layer is located on the first epitaxial layer. The second carbon nanotubelayer is located between the first epitaxial layer and the second epitaxial layer.
申请人：YANG WEI,SHOU-SHAN FAN
地址：Beijing CN,Beijing CN
国籍：CN,CN
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