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专利名称：Semiconductor device with polycrystalline
silicon emitter conductive layer
发明人：Yoshiyuki Ishigaki,Hiroki Honda,Kimiharu
Uga,Masahiro Ishida
申请号：US08/310526申请日：19940922公开号：US05471085A公开日：19951128
摘要：An n.sup.+ buried layer is formed on a surface of p.sup.- semiconductor
substrate. An n.sup.- epitaxial growth layer and an n.sup.+ diffusion layer are formed on asurface of n.sup.+ buried layer. A p.sup.- base region and p.sup.+ external base regionadjoining to each other are formed on a surface of n.sup.- epitaxial growth layer. An ann.sup.+ emitter region is formed at a surface of p.sup.- base region. An emitter electrodeis formed adjacently to n.sup.+ emitter region. The emitter electrode is made ofpolycrystalline silicon doped with phosphorus at a concentration from 1×10.sup.20cm.sup.-3 to 6×10.sup.20 cm. sup.-3.
申请人：MITSUBISHI DENKI KABUSHIKI KAISHA
代理机构：Lowe, Price, LeBlanc & Becker
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