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2N/SST5460 Series
Vishay Siliconix
P-Channel JFETs
2N54602N54612N5462
PRODUCT SUMMARYPart Number2N/SST54602N/SST54612N/SST5462SST5460SST5461SST5462
VGS(off) (V)0.75 to 61 to 7.51.8 to 9V(BR)GSS Min (V)404040gfs Min (mS)11.52IDSS Min (mA)–1–2–4FEATURES
DDDD
High Input ImpedanceVery Low Noise
High Gain: AV = 80 @ 20 mALow Capacitance: 1.2 pF Typical
BENEFITS
DLow Signal Loss/System ErrorDHigh System Sensitivity
DHigh-Quality Low-Level SignalAmplification
APPLICATIONS
DLow-Current, Low-Voltage AmplifiersDHigh-Side Switching
DUltrahigh Input ImpedancePre-Amplifiers
DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed toprovide all-around performance in a wide range of amplifierand analog switch applications.
The 2N series, TO-226AA (TO-92), and SST series, TO-236(SOT-23), plastic packages provide low cost options, and areavailable in tape-and-reel for automated assembly, (seePackaging Information).
TO-226AA(TO-92)S
12N54602N54612N5462
D
1TO-236(SOT-23)
SST5460 (B0)*SST5461 (B1)*SST5462 (B2)**Marking Code for TO-236
D
23S
2G
G
3Top View
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 VGate-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 VGate Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mAStorage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_COperating Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.). . . . . . . . . . . . . . . . . . . 300_CPower Dissipationa. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mWNotes
a.Derate 2.8 mW/_C above 25_C
Document Number: 70262S-04030—Rev. D, 04-Jun-01
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元器件交易网www.cecb2b.com
2N/SST5460 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)Limits2N/SST54602N/SST54612N/SST5462ParameterStaticGate-SourceBreakdown VoltageGate-Source Cutoff VoltageSaturation Drain CurrentbGate Reverse CurrentGate Operating CurrentDrain Cutoff CurrentSymbolTest ConditionsTypaMinMaxMinMaxMinMaxUnitV(BR)GSSVGS(off)IDSSIGSSIGID(off)IG = 10 mA , VDS = 0 VVDS = –15 V, ID = –1 mAVDS = –15 V, VGS = 0 VVGS = 20 V, VDS = 0 VTA = 100_CVDG = –20 V, ID = –0.1 mAVDS = –15 V, VGS = 10 VID = –0.1 mA55400.75–16–551401–27.5–95140V1.8–49–1651mAnAmApA0.0030.00033–51.32.33.8–0.70.540.84.51.56VGate-Source VoltageVGSVDS = –15 VID = –0.2 mAID = –0.4 mAGate-SourceForward VoltageVGS(F)IG = –1 mA , VDS = 0 VDynamicCommon-SourceForward TransconductanceCommon-SourceOutput ConductanceCommon-SourceReverse TransferCapacitanceCommon-SourceReverse TransferCapacitanceCommon-SourceOutput CapacitanceEquivalent InputNoise VoltageNoise Figuregfsgos1VDS = –15 V, VGS = 0 Vf = 1 kHz2NCissVDS = –15 V, VGS = 0 Vf = 1 MHz2NCossVDS = –15 V, VGS = 0 Vf = 100 HzVDS = –15 V, VGS = 0 Vf = 100 Hz, RG = 1 MWBW = 1 HzSST2NSST2NSSTSST4.54.51.21.51.515150.20.2PSCIB
2.52.52.5dB115115115nV⁄√Hz222pF47571.5575726757mSmSCrssenNFNotes
a.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.b.Pulse test: PW v300 ms duty cycle v2%.
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Document Number: 70262S-04030—Rev. D, 04-Jun-01
元器件交易网www.cecb2b.com
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)Drain Current and Transconductancevs. Gate-Source Cutoff Voltage
–20
5
rDS(on) – Drain-Source On-Resistance ( Ω )gfs – Forward Transconductance (mS)1000
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100
IDSS – Saturation Drain Current (mA)–16
gfs–12
IDSS80080
gos– Output Conductance (mS)600
rDS60
gos40
2.5
–8
400
–4
gfs @ VDS = –15 V, VGS = 0 VIDSS @ VDS = –15 V, VGS = 0 Vf = 1 kHz0
0
2
4
6
8
10
VGS(off) – Gate-Source Cutoff Voltage (V)
200
rDS @ ID = –100 mA, VGS = 0 Vgos @ VDS = –15 V, VGS = 0 Vf = 1 kHz0
2
4
6
8
10
20
00
VGS(off) – Gate-Source Cutoff Voltage (V)
0
Output Characteristics
–2VGS(off) = 1.5 V–10
VGS = 0 V0.2 VID– Drain Current (mA)–8
Output Characteristics
VGS(off) = 3 V–1.6ID– Drain Current (mA)–1.20.4 V0.6 V0.8 V–6
VGS= 0 V0.5 V1.0 V–0.8–4
–0.41.0 V–2
1.5 V2.0 V00
–4
–8
–12
–16
–20
VDS – Drain-Source Voltage (V)
00
–4
–8
–12
–16
–20
VDS – Drain-Source Voltage (V)
Output Characteristics
–0.5VGS(off) = 1.5 V–0.4ID– Drain Current (mA)VGS = 0 V0.2 V0.4 V0.6 VID– Drain Current (mA)–1.6–2
Output Characteristics
VGS(off) = 3 V0.5 V1.0 V–1.2
1.5 V–0.8
2.0 V–0.4
1.2 V2.5 V0
–1
0
–0.2
–0.4
–0.6
–0.8
–1
VGS= 0 V–0.30.8 V–0.21.0 V–0.100
–0.2
–0.4
–0.6
–0.8
VDS – Drain-Source Voltage (V)
VDS – Drain-Source Voltage (V)
Document Number: 70262S-04030—Rev. D, 04-Jun-01
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2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)Transfer Characteristics
–5
VGS(off) = 1.5 V–4
ID– Drain Current (mA)ID– Drain Current (mA)VDS = –15 V–8–10
VGS(off) = 3 VVDS = –15 VTransfer Characteristics
–3
TA = –55_C25_C–1
125_C00
0.4
0.8
1.2
1.6
2
VGS – Gate-Source Voltage (V)
–6
TA = –55_C–2–4
25_C–2
125_C00
1
2
3
4
5
VGS – Gate-Source Voltage (V)
10 nA
On-Resistance vs. Drain Current
1000rDS(on) – Drain-Source On-Resistance ( Ω )TA = 25_C800
VGS(off) = 1.5 VIG– Gate LeakageGate Leakage Current
1 nA
–5 mATA = 125_C600
100 pA
IGSS @ 125_C–1 mA3 V400
4 V200
10 p A
TA = 25_C1 pA
–5 mA–0.1 mAIGSS @ 25_C0–0.1
–1
ID – Drain Current (mA)
–10
0.1 pA
0
–10
–20
–30
–40
–50
VDG – Drain-Gate Voltage (V)
Transconductance vs. Gate-Source Voltage
5
VGS(off) = 1.5 Vgfs – Forward Transconductance (mS)4
VDS = –15 Vf = 1 kHz5
Transconductance vs. Gate-Source Voltage
VGS(off) = 3 Vgfs – Forward Transconductance (mS)4
TA = –55_C3
25_CVDS = –15 Vf = 1 kHz3
TA = –55_C2
25_C2
125_C1
1
125_C00
0.4
0.8
1.2
1.6
2
VGS – Gate-Source Voltage (V)
00
1
2
3
4
5
VGS – Gate-Source Voltage (V)
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Document Number: 70262S-04030—Rev. D, 04-Jun-01
元器件交易网www.cecb2b.com
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)Circuit Voltage Gain vs. Drain Current
100
VGS(off) = 1.5 V10
VGS(off) = 3 V80
AV– Voltage Gaingfs – Forward Transconductance (µS)Common-Source Forward Transconductance
vs. Drain Current
TA = –55_C1
125_C60
VGS(off) = 3 V25_C40
20
0
Assume VDD = –15 V, VDS = –5 VgfsRL10VAV+RL+ID1)RLgos–0.01
–0.1
ID – Drain Current (mA)
–1
VDS = –15 Vf = 1 kHz0.1
–0.1
–1
ID – Drain Current (mA)
–10
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
Crss– Reverse Feedback Capacitance (pF)f = 1 MHzCiss– Input Capacitance (pF)8
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
f = 1 MHz6
2.5
4
–5 V–5 V–15 V0
2
–15 V00
4
8
12
16
20
VGS – Gate-Source Voltage (V)
048121620
VGS – Gate-Source Voltage (V)
100
Equivalent Input Noise Voltage vs. Frequency
20VDS = –15 Vgos – Output Conductance (µS)16Output Conductance vs. Drain Current
VGS(off) = 3 Ven – Noise Voltage nV/ HzTA = –55_C1225_C8125_C4VDS = –15 Vf = 1 kHzID = –0.1 mA10
ID = –1 mA110
100
1 k
f – Frequency (Hz)
10 k
100 k
0–0.1
–1
ID – Drain Current (mA)
–10
Document Number: 70262S-04030—Rev. D, 04-Jun-01
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