专利内容由知识产权出版社提供
专利名称：Technique for forming metal lines in a
semiconductor by adapting the temperaturedependence of the line resistance
发明人：Moritz Andreas Meyer,Matthias
Lehr,Eckhard Langer
申请号：US11952522申请日：20071207公开号：US08058731B2公开日：20111115
专利附图：
摘要：By moderately introducing defects into a highly conductive material, such as
copper, the resistance versus temperature behavior may be significantly modified so thatenhanced electromigration behavior and/or electrical performance may be obtained inmetallization structures of advanced semiconductor devices. The defect-related portionof the resistance may be moderately increased so as to change the slope of theresistance versus temperature curve, thereby allowing the incorporation of impurityatoms for enhancing the electromigration endurance while not unduly increasing theoverall resistance at the operating temperature or even reducing the correspondingresistance at the specified operating temperature. Thus, by appropriately designing theelectrical resistance for a target operating temperature, both the electromigrationbehavior and the electrical performance may be enhanced.
申请人：Moritz Andreas Meyer,Matthias Lehr,Eckhard Langer
地址：Dresden DE,Dresden DE,Radebeul DE
国籍：DE,DE,DE
代理机构：Williams, Morgan & Amerson
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