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Guard ring structure and method for forming the sa

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专利名称:Guard ring structure and method for

forming the same

发明人:Chiyuan Lu,Chien-Chih Lin,Cheng-Chou

Hung,Yu-Hua Huang

申请号:US14020367申请日:20130906公开号:US09397032B2公开日:20160719

专利附图:

摘要:A guard ring structure is provided, including a semiconductor substrate with acircuit region encircled by a first ring and a second ring. In one embodiment, the

semiconductor substrate has a first dopant type, and the first and second ring

respectively includes a plurality of separated first doping regions formed in a top portionof the semiconductor substrate, having a second dopant type opposite to the firstconductivity type, and an interconnect element formed over the semiconductorsubstrate, covering the first doping regions.

申请人:MediaTek Singapore Pte. Ltd.

地址:Singapore SG

国籍:SG

代理机构:McClure, Qualey & Rodack, LLP

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