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专利名称：Electrochemical dielectric isolation
technique
发明人：John P. Short,Craig J. McLachlan,Charles
Messmer,Paul S. Reinecke
申请号：US06/678075申请日：19841204公开号：US04554059A公开日：19851119
摘要：Plane indicating moats are formed extending through an epitaxial layer into asubstrate simultaneous with the formation of the isolation moats which terminate withinthe epitaxial layer. The substrate is ground to a predetermined thickness after formationof the dielectric isolation and support structure. The composite structure is inserted in anetchant with conditions set to electrochemically etch only the substrate. The exposedplane indicating moats are used as a reference for a final polishing step.
申请人：HARRIS CORPORATION
代理机构：Barnes & Thornburg
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