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专利名称：Power semiconductor device used for power
control
发明人：Wataru Saito,Ichiro Omura,Hiromichi Ohashi申请号：US10986103申请日：20041112公开号：US07102179B2公开日：20060905
专利附图：
摘要：A power semiconductor device includes a first semiconductor layer, a secondsemiconductor layer of a first conductivity type, first and second main electrodes, acontrol electrode and a third semiconductor layer. The second semiconductor layer is
formed on the first semiconductor layer. The first and second main electrodes areformed on the second semiconductor layer separately from each other. The controlelectrode is formed on the second semiconductor layer between the first and secondmain electrodes. The third semiconductor layer is formed on the second semiconductorlayer between the control electrode and the second main electrode.
申请人：Wataru Saito,Ichiro Omura,Hiromichi Ohashi
地址：Kawasaki JP,Yokohama JP,Yokohama JP
国籍：JP,JP,JP
代理机构：Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
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